IXYS HiperFET, Polar3 N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-3PN IXFQ28N60P3

RS Stock No.:: 168-4739
Mfr. Part No.:: IXFQ28N60P3
Manufacturer:: IXYS

IXYS HiperFET, Polar3 N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-3PN IXFQ28N60P3

This image is representative of the product range

Bulk discount available

Subtotal (1 tube of 30 units)**

MYR685.89

Available for back order.*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over MYR500.00

Units	Per Unit	Per Tube**
30 - 30	MYR22.863	MYR685.89
60 - 90	MYR22.36	MYR670.80
120 +	MYR21.949	MYR658.47

**price indicative

RS Stock No.:: 168-4739
Mfr. Part No.:: IXFQ28N60P3
Manufacturer:: IXYS

IXFQ28N60P3, IXFH28N60P3, Polar3 HiperFET, Power MOSFET, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Rectifier
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	28 A
Maximum Drain Source Voltage	600 V
Package Type	TO-3PN
Series	HiperFET, Polar3
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	260 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	695 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Width	4.9mm
Transistor Material	Si
Typical Gate Charge @ Vgs	50 nC @ 10 V
Length	15.8mm
Maximum Operating Temperature	+150 °C
Height	20.3mm
Minimum Operating Temperature	-55 °C

IXYS HiperFET, Polar3 N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-3PN IXFQ28N60P3

FREE delivery for orders over MYR500.00

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series

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