N-Channel MOSFET, 22 A, 600 V, 3-Pin TO-220AB IXYS IXFP22N60P3

RS Stock No.:: 802-4427
Mfr. Part No.:: IXFP22N60P3
Manufacturer:: IXYS

N-Channel MOSFET, 22 A, 600 V, 3-Pin TO-220AB IXYS IXFP22N60P3

This image is representative of the product range

Bulk discount available

Price Each (In a Pack of 2)

MYR24.975

Temporarily out of stock - back order for despatch 04/08/2025, delivery within 4 working days from despatch date*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per Unit	Per Pack**
2 - 12	MYR24.975	MYR49.95
14 - 24	MYR23.73	MYR47.46
26 +	MYR22.545	MYR45.09

**price indicative

RS Stock No.:: 802-4427
Mfr. Part No.:: IXFP22N60P3
Manufacturer:: IXYS

IXFA22N60P3, IXFP22N60P3, IXFQ22N60P3, IXFH22N60P3, Polar3 HiperFET, Power MOSFET, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Rectifier
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	22 A
Maximum Drain Source Voltage	600 V
Package Type	TO-220AB
Series	HiperFET, Polar3
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	360 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	500 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Typical Gate Charge @ Vgs	38 nC @ 10 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Length	10.66mm
Width	4.83mm
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	16mm

N-Channel MOSFET, 22 A, 600 V, 3-Pin TO-220AB IXYS IXFP22N60P3

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series