IXYS Polar3 Type N-Channel Power MOSFET, 98 A, 500 V Enhancement, 3-Pin TO-264
- RS Stock No.:
- 168-4737
- Mfr. Part No.:
- IXFK98N50P3
- Manufacturer:
- IXYS
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 25 units)*
MYR1,831.60
FREE delivery for orders over RM 500.00
Temporarily out of stock
- Shipping from 04 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 25 - 25 | MYR73.264 | MYR1,831.60 |
| 50 - 75 | MYR72.136 | MYR1,803.40 |
| 100 + | MYR70.728 | MYR1,768.20 |
*price indicative
- RS Stock No.:
- 168-4737
- Mfr. Part No.:
- IXFK98N50P3
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 98A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | Polar3 | |
| Package Type | TO-264 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 130W | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 197nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 19.96mm | |
| Height | 26.16mm | |
| Width | 5.13 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 98A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series Polar3 | ||
Package Type TO-264 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 130W | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 197nC | ||
Maximum Operating Temperature 150°C | ||
Length 19.96mm | ||
Height 26.16mm | ||
Width 5.13 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- US
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS Polar3 Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-264 IXFK98N50P3
- IXYS Polar3 Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin PLUS247 IXFX98N50P3
- IXYS Polar3 Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-247 IXFH20N50P3
- IXYS Polar3 Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin TO-3PN IXFQ28N60P3
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-264
- IXYS HiperFET Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-264
- IXYS HiperFET Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-264 IXFK48N50