Dual N/P-Channel-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay SI4599DY-T1-GE3

RS Stock No.:: 165-7255
Mfr. Part No.:: SI4599DY-T1-GE3
Manufacturer:: Vishay

Dual N/P-Channel-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay SI4599DY-T1-GE3

This image is representative of the product range

Bulk discount available

Price Each (On a Reel of 2500)

MYR1.872

9820 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per Unit	Per Reel**
2500 - 2500	MYR1.872	MYR4,680.00
5000 - 7500	MYR1.83	MYR4,575.00
10000 +	MYR1.797	MYR4,492.50

**price indicative

RS Stock No.:: 165-7255
Mfr. Part No.:: SI4599DY-T1-GE3
Manufacturer:: Vishay

Si4599DY, N- and P-Channel 40V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	4.7 A, 6.8 A
Maximum Drain Source Voltage	40 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	42.5 mΩ, 62 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	3 W, 3.1 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Width	4mm
Number of Elements per Chip	2
Length	5mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Typical Gate Charge @ Vgs	11.7 nC @ 10 V, 25 nC @ 10 V
Height	1.55mm
Minimum Operating Temperature	-55 °C

Dual N/P-Channel-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay SI4599DY-T1-GE3

Dual N/P-Channel MOSFET, Vishay Semiconductor

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