Toshiba U-MOSVIII-H Type N-Channel MOSFET, 15 A, 40 V Enhancement, 3-Pin TO-252 TK15S04N1L,LQ(O
- RS Stock No.:
- 133-2798
- Mfr. Part No.:
- TK15S04N1L,LQ(O
- Manufacturer:
- Toshiba
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
MYR29.15
FREE delivery for orders over RM 500.00
In Stock
- 25 unit(s) ready to ship from another location
- Plus 1,770 unit(s) shipping from 07 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | MYR5.83 | MYR29.15 |
| 25 - 45 | MYR5.542 | MYR27.71 |
| 50 - 245 | MYR5.184 | MYR25.92 |
| 250 - 495 | MYR4.87 | MYR24.35 |
| 500 + | MYR4.596 | MYR22.98 |
*price indicative
- RS Stock No.:
- 133-2798
- Mfr. Part No.:
- TK15S04N1L,LQ(O
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | U-MOSVIII-H | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 37mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 46W | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.5 mm | |
| Standards/Approvals | No | |
| Height | 2.3mm | |
| Length | 6.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series U-MOSVIII-H | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 37mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 46W | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 175°C | ||
Width 5.5 mm | ||
Standards/Approvals No | ||
Height 2.3mm | ||
Length 6.5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET Transistors, Toshiba
Related links
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