Toshiba U-MOSVIII-H Type N-Channel MOSFET, 148 A, 100 V Enhancement, 3-Pin TO-220 TK65E10N1,S1X(S
- RS Stock No.:
- 799-5185
- Mfr. Part No.:
- TK65E10N1,S1X(S
- Manufacturer:
- Toshiba
Bulk discount available
Subtotal (1 pack of 5 units)*
MYR56.13
FREE delivery for orders over RM 500.00
In Stock
- 10 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | MYR11.226 | MYR56.13 |
| 25 - 120 | MYR10.888 | MYR54.44 |
| 125 - 245 | MYR10.552 | MYR52.76 |
| 250 - 495 | MYR10.324 | MYR51.62 |
| 500 + | MYR10.098 | MYR50.49 |
*price indicative
- RS Stock No.:
- 799-5185
- Mfr. Part No.:
- TK65E10N1,S1X(S
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 148A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | U-MOSVIII-H | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 192W | |
| Typical Gate Charge Qg @ Vgs | 81nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 15.1mm | |
| Length | 10.16mm | |
| Width | 4.45 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 148A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series U-MOSVIII-H | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 192W | ||
Typical Gate Charge Qg @ Vgs 81nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 15.1mm | ||
Length 10.16mm | ||
Width 4.45 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
Related links
- Toshiba U-MOSVIII-H Type N-Channel MOSFET 80 V EnhancementS1X(S
- Toshiba U-MOSVIII-H Type N-Channel MOSFET 60 V EnhancementS1X(S
- Toshiba U-MOSVIII-H Type N-Channel MOSFET 30 V EnhancementLQ(S
- Toshiba U-MOSVIII-H Type N-Channel MOSFET 80 V EnhancementS4X(S
- Toshiba U-MOSVIII-H Type N-Channel MOSFET 40 V EnhancementLQ(O
- Toshiba U-MOSVIII-H Type N-Channel MOSFET 60 V EnhancementLQ(S
- Toshiba U-MOSVIII-H Type N-Channel MOSFET 80 V EnhancementLQ(S
- Toshiba TK Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-220