Toshiba U-MOSVIII-H Type N-Channel MOSFET, 40 A, 60 V Enhancement, 8-Pin SOP TPH11006NL,LQ(S
- RS Stock No.:
- 133-2809
- Distrelec Article No.:
- 304-09-221
- Mfr. Part No.:
- TPH11006NL,LQ(S
- Manufacturer:
- Toshiba
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
MYR34.58
FREE delivery for orders over RM 500.00
In Stock
- Plus 980 unit(s) shipping from 29 June 2026
- Plus 11,700 unit(s) shipping from 06 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 80 | MYR1.729 | MYR34.58 |
| 100 - 180 | MYR1.693 | MYR33.86 |
| 200 - 980 | MYR1.643 | MYR32.86 |
| 1000 - 1980 | MYR1.594 | MYR31.88 |
| 2000 + | MYR1.546 | MYR30.92 |
*price indicative
- RS Stock No.:
- 133-2809
- Distrelec Article No.:
- 304-09-221
- Mfr. Part No.:
- TPH11006NL,LQ(S
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOP | |
| Series | U-MOSVIII-H | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Power Dissipation Pd | 34W | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.95mm | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOP | ||
Series U-MOSVIII-H | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Power Dissipation Pd 34W | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.95mm | ||
Length 5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET Transistors, Toshiba
Related links
- Toshiba U-MOSVIII-H Type N-Channel MOSFET 30 V EnhancementLQ(S
- Toshiba U-MOSVIII-H Type N-Channel MOSFET 80 V EnhancementLQ(S
- Toshiba U-MOSVIII-H Type N-Channel MOSFET 40 V EnhancementLQ(O
- Toshiba U-MOSVIII-H Type N-Channel MOSFET 60 V EnhancementS1X(S
- Toshiba U-MOSVIII-H Type N-Channel MOSFET 80 V EnhancementS1X(S
- Toshiba U-MOSVIII-H Type N-Channel MOSFET 100 V EnhancementS1X(S
- Toshiba U-MOSVIII-H Type N-Channel MOSFET 80 V EnhancementS4X(S
- Toshiba Type P-Channel MOSFET 30 V EnhancementLQ(S