Vishay SISS32LDN Type N-Channel Single MOSFETs, 63 A, 80 V Enhancement, 8-Pin PowerPAK
- RS Stock No.:
- 653-104
- Mfr. Part No.:
- SISS32LDN-T1-BE3
- Manufacturer:
- Vishay
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- RS Stock No.:
- 653-104
- Mfr. Part No.:
- SISS32LDN-T1-BE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 63A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | SISS32LDN | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0072Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 65.7W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 17.7nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Width | 3.3mm | |
| Height | 0.75mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 63A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series SISS32LDN | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0072Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 65.7W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 17.7nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Width 3.3mm | ||
Height 0.75mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
Vishay SISS32LDN Series Single MOSFETs, 80V Maximum Drain Source Voltage, 63A Maximum Continuous Drain Current - SISS32LDN-T1-BE3
This single MOSFET is a compact N-channel enhancement device designed for high-current switching in surface-mount applications. It operates across a wide temperature range and is intended for use where efficient conduction and robust voltage handling are required. The device is suitable for power conversion and switching stages in electronic systems that demand low conduction losses and moderate switching energy.
Features and Benefits:
• Very low Rds(on) 0.0072Ω reduces conduction losses under load
• 80V drain-source rating supports high-voltage switching tasks
• Continuous drain current 63A enables substantial load handling
• Maximum power dissipation 65.7W allows sustained thermal performance
• Gate charge 17.7nC facilitates predictable switching behaviour
• Forward voltage 1.1V minimises drop during conduction
• 80V drain-source rating supports high-voltage switching tasks
• Continuous drain current 63A enables substantial load handling
• Maximum power dissipation 65.7W allows sustained thermal performance
• Gate charge 17.7nC facilitates predictable switching behaviour
• Forward voltage 1.1V minimises drop during conduction
Applications
• Suitable for 80V DC-DC converter switching stages
• Ideal for high-current synchronous rectification designs
• Used with power trains in industrial motor controllers
• Can be used for load switching in server power supplies
• Suitable for compact SMD power modules and assemblies
• Ideal for high-current synchronous rectification designs
• Used with power trains in industrial motor controllers
• Can be used for load switching in server power supplies
• Suitable for compact SMD power modules and assemblies
What mounting style does it require for assembly?
It is supplied in a PowerPAK surface-mount package intended for reflow soldering onto PCB land patterns.
How does it perform thermally at elevated temperatures?
The device is specified to operate up to 150°C junction temperature, enabling use in thermally demanding environments when appropriate thermal management is applied.
What gate voltage limits should be observed during drive?
The maximum gate-to-source voltage is 20V, so gate-drive circuitry should remain within this limit to avoid device stress.
Is it suitable for automotive-qualified designs?
It is not classified as an automotive-standard device
designers should assess qualification needs against system requirements.
Related links
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