Bipolar Transistors

Bipolar Transistors are a solid state, three-pin devices made from three layers of silicon. A bipolar transistor is designed to amplify current, bipolar transistors can also function as a switch. There are two main types of transistor, PNP (positive negative positive) or NPN (negative positive-negative).

How a Bipolar transistor is made

Bipolar transistors are constructed by joining two signal diodes back to back creating two PN junctions connected in series, sharing a common P or N terminal. By nature, silicon does not normally conduct electricity well. However, when silicon is treated with certain chemicals or impurities we can make the material and electrons behave in a different way. This process is called doping. The doping process improves the semiconductors ability to conduct electricity.

How do bipolar transistors work?

Bipolar transistors have two possible functions, switching, and amplification. Due to the devices three layers of doped semiconductor material, supplying the transistor with a signal voltage enables the discrete component to act as an insulator or a conductor. This clever change provides the transistors with two basic functions, switching (digital) electronics or amplification (analog) electronics.

Transistors are available in panel, surface and through-hole mounting options in plastic package or metal can versions. All have three terminals or pins, the Base, the Collector, and the Emitter.

They are also available as;

  • Digital transistors - are made of a semiconductor material, usually silicon, which conducts the current (or electricity) with little resistance. They also tend to have at least three terminals for easy connection to an external circuit.
  • UJT transistors - constructed of a bar of lightly dope N type silicone with a small piece of heavily doped P type material attached to one side. Since the silicon bar is lightly dope it has very high resistance.

Applications of bipolar transistors?

Transistors are one of the most widely used discrete components in electronic designs and circuits. Transistors are used for the amplification of all types of electrical signals in circuits made up of individual components rather than ICs (integrated circuits).


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Description Price Transistor Type Maximum DC Collector Current Maximum Collector Emitter Voltage Package Type Mounting Type Maximum Power Dissipation Transistor Configuration Maximum Collector Base Voltage Maximum Emitter Base Voltage Maximum Operating Frequency Pin Count Number of Elements per Chip Dimensions Minimum Operating Temperature
RS Stock No. 166-2584
Mfr. Part No.SS8050DBU
MYR0.175
Each (In a Bag of 10000)
units
NPN 1.5 A 25 V TO-92 Through Hole 1 W Single 40 V 6 V - 3 1 4.58 x 3.86 x 4.58mm -
RS Stock No. 739-0335
Mfr. Part No.SS8050DTA
MYR0.989
Each (In a Pack of 10)
units
NPN 1.5 A 25 V TO-92 Through Hole 1 W Single 40 V 6 V - 3 1 4.58 x 3.86 x 4.58mm -
RS Stock No. 125-0066
Mfr. Part No.MJ21193G
MYR23.289
Each (In a Tray of 100)
units
PNP 16 A 250 V TO-204AA Through Hole 250 W Single -400 V -5 V - 2 1 39.37 x 26.67 x 8.51mm -
RS Stock No. 739-0439
Mfr. Part No.2N4401BU
MYR0.81
Each (In a Pack of 10)
units
NPN 600 mA 40 V TO-92 Through Hole 625 mW Single 60 V 6 V - 3 1 5.2 x 4.19 x 5.33mm -55 °C
RS Stock No. 145-5433
Mfr. Part No.KSA1015YTA
MYR0.146
Each (On a Tape of 2000)
units
PNP 150 mA 50 V TO-92 Through Hole 400 mW Single -50 V -5 V 1 MHz 3 1 5.2 x 4.19 x 5.33mm -
RS Stock No. 805-1078
Mfr. Part No.2N4401TF
MYR0.372
Each (In a Pack of 200)
units
NPN 600 mA 40 V TO-92 Through Hole 625 mW Single 60 V 6 V 250 MHz 3 1 5.2 x 4.19 x 5.33mm -
RS Stock No. 805-1069
Mfr. Part No.2N4401TAR
MYR0.327
Each (In a Pack of 200)
units
NPN 600 mA 40 V TO-92 Through Hole 625 mW Single 60 V 6 V 250 MHz 3 1 5.2 x 4.19 x 5.33mm -
RS Stock No. 166-3204
Mfr. Part No.2N4401TF
MYR0.202
Each (On a Reel of 2000)
units
NPN 600 mA 40 V TO-92 Through Hole 625 mW Single 60 V 6 V 250 MHz 3 1 5.2 x 4.19 x 5.33mm -
RS Stock No. 508-412
Mfr. Part No.BCP53-10,115
BrandNexperia
MYR1.166
Each (In a Pack of 50)
units
PNP 1 A 80 V SOT-223 (SC-73) Surface Mount 1 W Single 100 V 5 V 145 MHz 4 1 1.7 x 6.7 x 3.7mm -65 °C
RS Stock No. 739-0394
Mfr. Part No.2N4401TA
MYR0.823
Each (In a Pack of 10)
units
NPN 600 mA 40 V TO-92 Through Hole 625 mW Single 60 V 6 V - 3 1 5.2 x 4.19 x 5.33mm -55 °C
RS Stock No. 806-4403
Mfr. Part No.KSA1015YTA
MYR0.298
Each (In a Pack of 200)
units
PNP 150 mA 50 V TO-92 Through Hole 400 mW Single -50 V -5 V 1 MHz 3 1 5.2 x 4.19 x 5.33mm -
RS Stock No. 145-5498
Mfr. Part No.2N4401TAR
MYR0.179
Each (On a Tape of 2000)
units
NPN 600 mA 40 V TO-92 Through Hole 625 mW Single 60 V 6 V 250 MHz 3 1 5.2 x 4.19 x 5.33mm -
RS Stock No. 166-1318
Mfr. Part No.BCP53-10,115
BrandNexperia
MYR0.337
Each (On a Reel of 1000)
units
PNP 1 A 80 V SOT-223 (SC-73) Surface Mount 1 W Single 100 V 5 V 145 MHz 4 1 1.7 x 6.7 x 3.7mm -
RS Stock No. 686-8045
Mfr. Part No.2SD882
MYR2.709
Each (In a Pack of 10)
units
NPN 3 A 30 V SOT-32 Through Hole 12.5 W Single 60 V 5 V 100 MHz 3 1 10.8 x 7.8 x 2.7mm -65 °C
RS Stock No. 102-4116
Mfr. Part No.2SD882
MYR2.709
Each (In a Tube of 50)
units
NPN 3 A 30 V SOT-32 Through Hole 12.5 W Single 60 V 5 V 100 MHz 3 1 10.8 x 7.8 x 2.7mm -
RS Stock No. 166-2728
Mfr. Part No.2N4401BU
MYR0.158
Each (In a Bag of 10000)
units
NPN 600 mA 40 V TO-92 Through Hole 625 mW Single 60 V 6 V 250 MHz 3 1 5.2 x 4.19 x 5.33mm -
RS Stock No. 146-2333
Mfr. Part No.BC548B A1
MYR0.149
Each (On a Tape of 4000)
units
NPN 100 mA 30 V TO-92 Through Hole 500 mW Single 30 V 6 V - 3 1 5.1 x 4.1 x 4.7mm -
RS Stock No. 803-1134
Mfr. Part No.BC557ATA
MYR0.324
Each (In a Pack of 200)
units
PNP 100 mA 45 V TO-92 Through Hole 500 mW Single -50 V -5 V 10 MHz 3 1 5.2 x 4.19 x 5.33mm -
RS Stock No. 102-4111
Mfr. Part No.BD139-10
MYR1.154
Each (In a Tube of 50)
units
NPN 3 A 80 V SOT-32 Through Hole 1.25 W Single 80 V 5 V - 3 1 10.8 x 7.8 x 2.7mm -
RS Stock No. 168-7405
Mfr. Part No.2SA1943-O(Q)
BrandToshiba
MYR8.507
Each (In a Tube of 100)
units
PNP 15 A 230 V TO-3PL Through Hole 150 W Single -230 V -5 V 30 MHz 3 1 20.5 x 5.2 x 26mm -