Bipolar Transistors

Bipolar Transistors are a solid state, three-pin devices made from three layers of silicon. A bipolar transistor is designed to amplify current, bipolar transistors can also function as a switch. There are two main types of transistor, PNP (positive negative positive) or NPN (negative positive-negative).

How a Bipolar transistor is made

Bipolar transistors are constructed by joining two signal diodes back to back creating two PN junctions connected in series, sharing a common P or N terminal. By nature, silicon does not normally conduct electricity well. However, when silicon is treated with certain chemicals or impurities we can make the material and electrons behave in a different way. This process is called doping. The doping process improves the semiconductors ability to conduct electricity.

How do bipolar transistors work?

Bipolar transistors have two possible functions, switching, and amplification. Due to the devices three layers of doped semiconductor material, supplying the transistor with a signal voltage enables the discrete component to act as an insulator or a conductor. This clever change provides the transistors with two basic functions, switching (digital) electronics or amplification (analog) electronics.

Transistors are available in panel, surface and through-hole mounting options in plastic package or metal can versions. All have three terminals or pins, the Base, the Collector, and the Emitter.

They are also available as;

  • Digital transistors - are made of a semiconductor material, usually silicon, which conducts the current (or electricity) with little resistance. They also tend to have at least three terminals for easy connection to an external circuit.
  • UJT transistors - constructed of a bar of lightly dope N type silicone with a small piece of heavily doped P type material attached to one side. Since the silicon bar is lightly dope it has very high resistance.

Applications of bipolar transistors?

Transistors are one of the most widely used discrete components in electronic designs and circuits. Transistors are used for the amplification of all types of electrical signals in circuits made up of individual components rather than ICs (integrated circuits).


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Description Price Transistor Type Maximum DC Collector Current Maximum Collector Emitter Voltage Package Type Mounting Type Maximum Power Dissipation Transistor Configuration Maximum Collector Base Voltage Maximum Emitter Base Voltage Maximum Operating Frequency Pin Count Number of Elements per Chip Dimensions Maximum Base Emitter Saturation Voltage
RS Stock No. 739-0335
Mfr. Part No.SS8050DTA
MYR0.62
Each (In a Pack of 10)
units
NPN 1.5 A 25 V TO-92 Through Hole 1 W Single 40 V 6 V - 3 1 4.58 x 3.86 x 4.58mm -
RS Stock No. 125-0066
Mfr. Part No.MJ21193G
MYR20.902
Each (In a Tray of 100)
units
PNP 16 A 250 V TO-204AA Through Hole 250 W Single -400 V -5 V - 2 1 39.37 x 26.67 x 8.51mm -
RS Stock No. 145-5537
Mfr. Part No.SS8050DTA
MYR0.175
Each (On a Tape of 2000)
units
NPN 1.5 A 25 V TO-92 Through Hole 1 W Single 40 V 6 V - 3 1 4.58 x 3.86 x 4.58mm -
RS Stock No. 145-5433
Mfr. Part No.KSA1015YTA
MYR0.146
Each (On a Tape of 2000)
units
PNP 150 mA 50 V TO-92 Through Hole 400 mW Single -50 V -5 V 1 MHz 3 1 5.2 x 4.19 x 5.33mm -
RS Stock No. 739-0394
Mfr. Part No.2N4401TA
MYR0.569
Each (In a Pack of 10)
units
NPN 600 mA 40 V TO-92 Through Hole 625 mW Single 60 V 6 V - 3 1 5.2 x 4.19 x 5.33mm -
RS Stock No. 508-412
Mfr. Part No.BCP53-10,115
BrandNexperia
MYR0.921
Each (In a Pack of 50)
units
PNP 1 A 80 V SOT-223 (SC-73) Surface Mount 1 W Single 100 V 5 V 145 MHz 4 1 1.7 x 6.7 x 3.7mm -
RS Stock No. 166-3204
Mfr. Part No.2N4401TF
MYR0.179
Each (On a Reel of 2000)
units
NPN 600 mA 40 V TO-92 Through Hole 625 mW Single 60 V 6 V 250 MHz 3 1 5.2 x 4.19 x 5.33mm -
RS Stock No. 102-4116
Mfr. Part No.2SD882
MYR2.157
Each (In a Tube of 50)
units
NPN 3 A 30 V SOT-32 Through Hole 12.5 W Single 60 V 5 V 100 MHz 3 1 10.8 x 7.8 x 2.7mm -
RS Stock No. 166-1318
Mfr. Part No.BCP53-10,115
BrandNexperia
MYR0.321
Each (On a Reel of 1000)
units
PNP 1 A 80 V SOT-223 (SC-73) Surface Mount 1 W Single 100 V 5 V 145 MHz 4 1 1.7 x 6.7 x 3.7mm -
RS Stock No. 145-5498
Mfr. Part No.2N4401TAR
MYR0.179
Each (On a Tape of 2000)
units
NPN 600 mA 40 V TO-92 Through Hole 625 mW Single 60 V 6 V 250 MHz 3 1 5.2 x 4.19 x 5.33mm -
RS Stock No. 806-4403
Mfr. Part No.KSA1015YTA
MYR0.22
Each (In a Pack of 200)
units
PNP 150 mA 50 V TO-92 Through Hole 400 mW Single -50 V -5 V 1 MHz 3 1 5.2 x 4.19 x 5.33mm -
RS Stock No. 805-1078
Mfr. Part No.2N4401TF
MYR0.28
Each (In a Pack of 200)
units
NPN 600 mA 40 V TO-92 Through Hole 625 mW Single 60 V 6 V 250 MHz 3 1 5.2 x 4.19 x 5.33mm -
RS Stock No. 805-1069
Mfr. Part No.2N4401TAR
MYR0.327
Each (In a Pack of 200)
units
NPN 600 mA 40 V TO-92 Through Hole 625 mW Single 60 V 6 V 250 MHz 3 1 5.2 x 4.19 x 5.33mm -
RS Stock No. 686-8045
Mfr. Part No.2SD882
MYR2.157
Each (In a Pack of 10)
units
NPN 3 A 30 V SOT-32 Through Hole 12.5 W Single 60 V 5 V 100 MHz 3 1 10.8 x 7.8 x 2.7mm -
RS Stock No. 166-2728
Mfr. Part No.2N4401BU
MYR0.148
Each (In a Bag of 10000)
units
NPN 600 mA 40 V TO-92 Through Hole 625 mW Single 60 V 6 V 250 MHz 3 1 5.2 x 4.19 x 5.33mm -
RS Stock No. 739-0439
Mfr. Part No.2N4401BU
MYR0.796
Each (In a Pack of 10)
units
NPN 600 mA 40 V TO-92 Through Hole 625 mW Single 60 V 6 V - 3 1 5.2 x 4.19 x 5.33mm -
RS Stock No. 760-3117
Mfr. Part No.2SA1943-O(Q)
BrandToshiba
MYR12.62
Each
units
PNP 15 A 230 V TO-3PL Through Hole 150 W Single -230 V -5 V 30 MHz 3 1 20.5 x 5.2 x 26mm -
RS Stock No. 102-4111
Mfr. Part No.BD139-10
MYR1.154
Each (In a Tube of 50)
units
NPN 3 A 80 V SOT-32 Through Hole 1.25 W Single 80 V 5 V - 3 1 10.8 x 7.8 x 2.7mm -
RS Stock No. 168-7405
Mfr. Part No.2SA1943-O(Q)
BrandToshiba
MYR8.507
Each (In a Tube of 100)
units
PNP 15 A 230 V TO-3PL Through Hole 150 W Single -230 V -5 V 30 MHz 3 1 20.5 x 5.2 x 26mm -
RS Stock No. 124-1316
Mfr. Part No.FJA13009TU
MYR5.265
Each (In a Tube of 30)
units
NPN 12 A 400 V TO-3P Through Hole 130 W Single 700 V 9 V - 3 1 15.8 x 5 x 20.1mm -