Bipolar Transistors

Bipolar Transistors are a solid state, three-pin devices made from three layers of silicon. A bipolar transistor is designed to amplify current, bipolar transistors can also function as a switch. There are two main types of transistor, PNP (positive negative positive) or NPN (negative positive-negative).

How a Bipolar transistor is made

Bipolar transistors are constructed by joining two signal diodes back to back creating two PN junctions connected in series, sharing a common P or N terminal. By nature, silicon does not normally conduct electricity well. However, when silicon is treated with certain chemicals or impurities we can make the material and electrons behave in a different way. This process is called doping. The doping process improves the semiconductors ability to conduct electricity.

How do bipolar transistors work?

Bipolar transistors have two possible functions, switching, and amplification. Due to the devices three layers of doped semiconductor material, supplying the transistor with a signal voltage enables the discrete component to act as an insulator or a conductor. This clever change provides the transistors with two basic functions, switching (digital) electronics or amplification (analog) electronics.

Transistors are available in panel, surface and through-hole mounting options in plastic package or metal can versions. All have three terminals or pins, the Base, the Collector, and the Emitter.

They are also available as;

  • Digital transistors - are made of a semiconductor material, usually silicon, which conducts the current (or electricity) with little resistance. They also tend to have at least three terminals for easy connection to an external circuit.
  • UJT transistors - constructed of a bar of lightly dope N type silicone with a small piece of heavily doped P type material attached to one side. Since the silicon bar is lightly dope it has very high resistance.

Applications of bipolar transistors?

Transistors are one of the most widely used discrete components in electronic designs and circuits. Transistors are used for the amplification of all types of electrical signals in circuits made up of individual components rather than ICs (integrated circuits).


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Description Price Transistor Type Maximum DC Collector Current Maximum Collector Emitter Voltage Package Type Mounting Type Maximum Power Dissipation Transistor Configuration Maximum Collector Base Voltage Maximum Emitter Base Voltage Maximum Operating Frequency Pin Count Number of Elements per Chip Dimensions Minimum Operating Temperature
RS Stock No. 163-0849
Mfr. Part No.2SC5707-TL-E
MYR1.323
Each (On a Reel of 700)
units
NPN 8 A 50 V TP-FA Surface Mount 15 W Single 100 V 6 V 1 MHz 4 1 6.5 x 5.5 x 2.3mm -
RS Stock No. 296-273
Mfr. Part No.MJ15004G
MYR30.08
Each
units
PNP 20 A 140 V TO-204AA Through Hole 250 W Single 140 V 5 V 2 MHz 2 1 39.37 x 26.67 x 8.51mm -65 °C
RS Stock No. 903-4305
Mfr. Part No.KSC2690AYS
MYR2.205
Each (In a Pack of 50)
units
NPN 1.2 A 160 V TO-126 Through Hole 20 W Single 160 V 5 V - 3 1 8 x 3.25 x 11mm -
RS Stock No. 807-0899
Mfr. Part No.FJP13009TU
MYR4.253
Each (In a Pack of 10)
units
NPN 12 A 400 V TO-220 Through Hole 100 W Single 700 V 9 V 4 MHz 3 1 10.67 x 4.83 x 16.51mm -
RS Stock No. 803-1068
Mfr. Part No.BC33725TAR
MYR0.394
Each (In a Pack of 200)
units
NPN 800 mA 50 V TO-92 Through Hole 625 mW Single 10 V 5 V 50 MHz 3 1 4.58 x 3.86 x 4.58mm -
RS Stock No. 739-0423
Mfr. Part No.KSB772YSTU
MYR2.216
Each (In a Pack of 5)
units
PNP 3 A 30 V TO-126 Through Hole 10 W Single -40 V -5 V 80 MHz 3 1 8 x 3.25 x 11mm -
RS Stock No. 166-3205
Mfr. Part No.2N5551TA
MYR0.197
Each (On a Tape of 2000)
units
NPN 600 mA 160 V TO-92 Through Hole 625 mW Single 180 V 6 V 100 MHz 3 1 5.2 x 4.19 x 5.33mm -
RS Stock No. 295-539
Mfr. Part No.ZTX753
MYR3.77
Each (In a Pack of 5)
units
PNP 2 A 100 V E-Line Through Hole 1 W Single 120 V 5 V 140 MHz 3 1 4.01 x 4.77 x 2.41mm -55 °C
RS Stock No. 671-1107
Mfr. Part No.BC32740TA
MYR1.007
Each (In a Pack of 10)
units
PNP 800 mA 45 V TO-92 Through Hole 625 mW Single - 5 V 100 MHz 3 1 5.33 x 5.2 x 4.19mm -55 °C
RS Stock No. 145-4546
Mfr. Part No.KSB772YSTU
MYR1.591
Each (In a Tube of 60)
units
PNP 3 A 30 V TO-126 Through Hole 10 W Single -40 V -5 V 80 MHz 3 1 8 x 3.25 x 11mm -
RS Stock No. 545-0438
Mfr. Part No.MMBTA42LT1G
MYR0.805
Each (In a Pack of 50)
units
NPN 500 mA 300 V SOT-23 Surface Mount 300 mW Single 300 V 6 V 50 MHz 3 1 0.94 x 2.9 x 1.3mm -55 °C
RS Stock No. 911-4713
Mfr. Part No.BDP949
BrandInfineon
MYR1.439
Each (On a Reel of 1000)
units
NPN 3 A 60 V SOT-223 Surface Mount 5 W Single 60 V 5 V 100 MHz 4 1 6.5 x 3.5 x 1.6mm -
RS Stock No. 166-3209
Mfr. Part No.2N5551TF
MYR0.202
Each (On a Reel of 2000)
units
NPN 600 mA 160 V TO-92 Through Hole 625 mW Single 180 V 6 V 100 MHz 3 1 5.2 x 4.19 x 5.33mm -
RS Stock No. 124-1460
Mfr. Part No.2SC5200OTU
MYR14.584
Each (In a Tube of 25)
units
NPN 17 A 250 V TO-264 Through Hole 150 W Single 250 V 5 V 30 MHz 3 1 20 x 5 x 26mm -
RS Stock No. 805-1104
Mfr. Part No.2N5551TA
MYR0.359
Each (In a Pack of 200)
units
NPN 600 mA 160 V TO-92 Through Hole 625 mW Single 180 V 6 V 100 MHz 3 1 5.2 x 4.19 x 5.33mm -
RS Stock No. 669-7445
Mfr. Part No.ZDT6790TA
MYR5.046
Each (In a Pack of 5)
units
NPN + PNP 2 A 40 V, 45 V SM Surface Mount 2.75 W Isolated 45 V 5 V 150 MHz 8 2 1.6 x 6.7 x 3.7mm -55 °C
RS Stock No. 166-2959
Mfr. Part No.2N5551BU
MYR0.162
Each (In a Bag of 10000)
units
NPN 600 mA 160 V TO-92 Through Hole 625 mW Single 180 V 6 V 100 MHz 3 1 5.2 x 4.19 x 5.33mm -
RS Stock No. 177-5497
Mfr. Part No.2N2222ADCSM
BrandSemelab
MYR153.465
Each (In a Tray of 100)
units
NPN 800 mA 50 V LCC 2 Surface Mount 500 mW Isolated 75 V 6 V 250 MHz 6 2 6.22 x 4.32 x 1.4mm -
RS Stock No. 445-2146
Mfr. Part No.BDP949
BrandInfineon
MYR2.484
Each (In a Pack of 5)
units
NPN 3 A 60 V SOT-223 Surface Mount 5 W Single 60 V 5 V 100 MHz 3 + Tab 1 1.6 x 6.5 x 3.5mm -65 °C
RS Stock No. 805-1113
Mfr. Part No.2N5551TF
MYR0.372
Each (In a Pack of 200)
units
NPN 600 mA 160 V TO-92 Through Hole 625 mW Single 180 V 6 V 100 MHz 3 1 5.2 x 4.19 x 5.33mm -