Bipolar Transistors

Bipolar Transistors are a solid state, three-pin devices made from three layers of silicon. A bipolar transistor is designed to amplify current, bipolar transistors can also function as a switch. There are two main types of transistor, PNP (positive negative positive) or NPN (negative positive-negative).

How a Bipolar transistor is made

Bipolar transistors are constructed by joining two signal diodes back to back creating two PN junctions connected in series, sharing a common P or N terminal. By nature, silicon does not normally conduct electricity well. However, when silicon is treated with certain chemicals or impurities we can make the material and electrons behave in a different way. This process is called doping. The doping process improves the semiconductors ability to conduct electricity.

How do bipolar transistors work?

Bipolar transistors have two possible functions, switching, and amplification. Due to the devices three layers of doped semiconductor material, supplying the transistor with a signal voltage enables the discrete component to act as an insulator or a conductor. This clever change provides the transistors with two basic functions, switching (digital) electronics or amplification (analog) electronics.

Transistors are available in panel, surface and through-hole mounting options in plastic package or metal can versions. All have three terminals or pins, the Base, the Collector, and the Emitter.

They are also available as;

  • Digital transistors - are made of a semiconductor material, usually silicon, which conducts the current (or electricity) with little resistance. They also tend to have at least three terminals for easy connection to an external circuit.
  • UJT transistors - constructed of a bar of lightly dope N type silicone with a small piece of heavily doped P type material attached to one side. Since the silicon bar is lightly dope it has very high resistance.

Applications of bipolar transistors?

Transistors are one of the most widely used discrete components in electronic designs and circuits. Transistors are used for the amplification of all types of electrical signals in circuits made up of individual components rather than ICs (integrated circuits).


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Description Price Transistor Type Maximum DC Collector Current Maximum Collector Emitter Voltage Package Type Mounting Type Maximum Power Dissipation Transistor Configuration Maximum Collector Base Voltage Maximum Emitter Base Voltage Maximum Operating Frequency Pin Count Number of Elements per Chip Dimensions Minimum Operating Temperature
RS Stock No. 686-8076
Mfr. Part No.BD139-10
MYR1.449
Each (In a Pack of 20)
units
NPN 3 A 80 V SOT-32 Through Hole 1.25 W Single 80 V 5 V - 3 1 10.8 x 7.8 x 2.7mm -65 °C
RS Stock No. 796-9713
Mfr. Part No.BC548B A1
MYR0.534
Each (In a Pack of 250)
units
NPN 100 mA 30 V TO-92 Through Hole 500 mW Single 30 V 6 V - 3 1 5.1 x 4.1 x 4.7mm -
RS Stock No. 102-4111
Mfr. Part No.BD139-10
MYR1.154
Each (In a Tube of 50)
units
NPN 3 A 80 V SOT-32 Through Hole 1.25 W Single 80 V 5 V - 3 1 10.8 x 7.8 x 2.7mm -
RS Stock No. 760-3117
Mfr. Part No.2SA1943-O(Q)
BrandToshiba
MYR13.00
Each
units
PNP 15 A 230 V TO-3PL Through Hole 150 W Single -230 V -5 V 30 MHz 3 1 20.5 x 5.2 x 26mm -
RS Stock No. 124-1316
Mfr. Part No.FJA13009TU
MYR6.615
Each (In a Tube of 30)
units
NPN 12 A 400 V TO-3P Through Hole 130 W Single 700 V 9 V - 3 1 15.8 x 5 x 20.1mm -
RS Stock No. 739-0401
Mfr. Part No.FJA13009TU
MYR8.19
Each (In a Pack of 5)
units
NPN 12 A 400 V TO-3P Through Hole 130 W Single 700 V 9 V - 3 1 15.8 x 5 x 20.1mm -
RS Stock No. 807-0899
Mfr. Part No.FJP13009TU
MYR4.253
Each (In a Pack of 10)
units
NPN 12 A 400 V TO-220 Through Hole 100 W Single 700 V 9 V 4 MHz 3 1 10.67 x 4.83 x 16.51mm -
RS Stock No. 671-1116
Mfr. Part No.BC33725TA
MYR0.91
Each (In a Pack of 10)
units
NPN 800 mA 45 V TO-92 Through Hole 625 mW Single - 5 V 100 MHz 3 1 5.33 x 5.2 x 4.19mm -55 °C
RS Stock No. 124-1731
Mfr. Part No.BC33725TA
MYR0.196
Each (On a Reel of 2000)
units
NPN 800 mA 45 V TO-92 Through Hole 625 mW Single - 5 V 100 MHz 3 1 5.33 x 5.2 x 4.19mm -
RS Stock No. 122-0070
Mfr. Part No.MJ15004G
MYR21.494
Each (In a Tray of 100)
units
PNP 20 A 140 V TO-204AA Through Hole 250 W Single 140 V 5 V 2 MHz 2 1 39.37 x 26.67 x 8.51mm -
RS Stock No. 803-1068
Mfr. Part No.BC33725TAR
MYR0.394
Each (In a Pack of 200)
units
NPN 800 mA 50 V TO-92 Through Hole 625 mW Single 10 V 5 V 50 MHz 3 1 4.58 x 3.86 x 4.58mm -
RS Stock No. 890-2591
Mfr. Part No.2SA1244-Y(T6L1,NQ)
BrandToshiba
MYR4.641
Each (In a Pack of 10)
units
PNP 5 A 50 V DPAK (TO-252) Surface Mount 20 W Single -60 V -5 V - 3 1 6.5 x 2.3 x 7mm -
RS Stock No. 178-7614
Mfr. Part No.SMMBTA56LT1G
MYR0.298
Each (On a Reel of 3000)
units
PNP 500 mA 80 V SOT-23 Surface Mount 225 mW Single -80 V dc -4 V 100 MHz 3 1 3.04 x 2.64 x 1.11mm -
RS Stock No. 803-1061
Mfr. Part No.BC33725TFR
MYR0.434
Each (In a Pack of 200)
units
NPN 800 mA 50 V TO-92 Through Hole 625 mW Single 10 V 5 V 50 MHz 3 1 4.58 x 3.86 x 4.58mm -
RS Stock No. 296-273
Mfr. Part No.MJ15004G
MYR30.08
Each
units
PNP 20 A 140 V TO-204AA Through Hole 250 W Single 140 V 5 V 2 MHz 2 1 39.37 x 26.67 x 8.51mm -65 °C
RS Stock No. 781-5250
Mfr. Part No.SMMBTA56LT1G
MYR1.03
Each (In a Pack of 50)
units
PNP 500 mA 80 V SOT-23 Surface Mount 225 mW Single -80 V dc -4 V 100 MHz 3 1 3.04 x 2.64 x 1.11mm -55 °C
RS Stock No. 178-7544
Mfr. Part No.BC33725TAR
MYR0.183
Each (In a Bag of 2000)
units
- - - - - - - - - - - - - -
RS Stock No. 545-0236
Mfr. Part No.MJ21194G
MYR32.62
Each
units
NPN 16 A 250 V TO-204 Through Hole 250 W Single 400 V 5 V 4 MHz 3 1 8.51 x 39.37 x 26.67mm -65 °C
RS Stock No. 145-5441
Mfr. Part No.FJP13009TU
MYR3.88
Each (In a Tube of 50)
units
NPN 12 A 400 V TO-220 Through Hole 100 W Single 700 V 9 V 4 MHz 3 1 10.67 x 4.83 x 16.51mm -
RS Stock No. 774-0742
Mfr. Part No.2SC5707-TL-E
MYR2.66
Each (In a Pack of 5)
units
NPN 8 A 50 V TP-FA Surface Mount 15 W Single 100 V 6 V 1 MHz 4 1 6.5 x 5.5 x 2.3mm -