IXYS GigaMOS, HiperFET N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD MMIX1T600N04T2

RS Stock No.:: 875-2475
Distrelec Article No.:: 302-53-513
Mfr. Part No.:: MMIX1T600N04T2
Manufacturer:: IXYS

IXYS GigaMOS, HiperFET N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD MMIX1T600N04T2

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MYR163.61

93 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

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Units	Per Unit
1 - 4	MYR163.61
5 - 9	MYR162.45
10 +	MYR153.56

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RS Stock No.:: 875-2475
Distrelec Article No.:: 302-53-513
Mfr. Part No.:: MMIX1T600N04T2
Manufacturer:: IXYS

MMIX1T600N04T2, TrenchT2 GigaMOS Power MOSFET N-Channel 40V 600A SMPD
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	600 A
Maximum Drain Source Voltage	40 V
Package Type	SMPD
Series	GigaMOS, HiperFET
Mounting Type	Surface Mount
Pin Count	24
Maximum Drain Source Resistance	1.3 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Maximum Power Dissipation	830 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	590 nC @ 10 V
Length	25.25mm
Width	23.25mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	5.7mm
Forward Diode Voltage	1.2V

IXYS GigaMOS, HiperFET N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD MMIX1T600N04T2

FREE delivery for orders over MYR500.00

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series

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