N-Channel MOSFET, 132 A, 250 V, 24-Pin SMPD IXYS MMIX1F180N25T

RS Stock No.:: 146-1770
Mfr. Part No.:: MMIX1F180N25T
Manufacturer:: IXYS

N-Channel MOSFET, 132 A, 250 V, 24-Pin SMPD IXYS MMIX1F180N25T

This image is representative of the product range

Bulk discount available

Price Each (In a Tube of 20)**

MYR187.74

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FREE delivery for orders over MYR700.00

Units	Per Unit	Per Tube**
20 - 20	MYR187.74	MYR3,754.80
40 - 60	MYR183.61	MYR3,672.20
80 +	MYR180.23	MYR3,604.60

**price indicative

RS Stock No.:: 146-1770
Mfr. Part No.:: MMIX1F180N25T
Manufacturer:: IXYS

MMIX1F180N25T, GigaMOS Trench HiperFET Power MOSFET N-Channel 250V 132A SMPD
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	132 A
Maximum Drain Source Voltage	250 V
Package Type	SMPD
Series	GigaMOS, HiperFET
Mounting Type	Surface Mount
Pin Count	24
Maximum Drain Source Resistance	13 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	570 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Width	23.25mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	364 nC @ 10 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Length	25.25mm
Forward Diode Voltage	1.3V
Minimum Operating Temperature	-55 °C
Height	5.7mm

N-Channel MOSFET, 132 A, 250 V, 24-Pin SMPD IXYS MMIX1F180N25T

FREE delivery for orders over MYR700.00

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series

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