N-Channel MOSFET, 120 A, 300 V, 3-Pin PLUS247 IXYS IXFX120N30P3

RS Stock No.:: 168-4745
Mfr. Part No.:: IXFX120N30P3
Manufacturer:: IXYS

N-Channel MOSFET, 120 A, 300 V, 3-Pin PLUS247 IXYS IXFX120N30P3

This image is representative of the product range

Bulk discount available

Price Each (In a Tube of 30)

MYR65.17

Available for back order.*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over MYR700.00

Units	Per Unit	Per Tube**
30 - 30	MYR65.17	MYR1,955.10
60 - 90	MYR63.736	MYR1,912.08
120 +	MYR62.563	MYR1,876.89

**price indicative

RS Stock No.:: 168-4745
Mfr. Part No.:: IXFX120N30P3
Manufacturer:: IXYS

IXFK150N30P3, IXFX150N30P3, Polar3 HiPerFET, Power MOSFET, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Diode
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	120 A
Maximum Drain Source Voltage	300 V
Series	HiperFET, Polar3
Package Type	PLUS247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	27 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.13 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	5.21mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	150 nC @ 10 V
Length	16.13mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Height	21.34mm

N-Channel MOSFET, 120 A, 300 V, 3-Pin PLUS247 IXYS IXFX120N30P3

FREE delivery for orders over MYR700.00

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series