IXYS HiperFET Type N-Channel MOSFET, 24 A, 1 kV Enhancement, 4-Pin SOT-227

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Subtotal (1 tube of 10 units)*

MYR2,123.35

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  • 80 unit(s) ready to ship from another location
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Units
Per Unit
Per Tube*
10 - 10MYR212.335MYR2,123.35
20 - 30MYR207.664MYR2,076.64
40 +MYR203.84MYR2,038.40

*price indicative

RS Stock No.:
146-1694
Mfr. Part No.:
IXFN24N100
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

24A

Maximum Drain Source Voltage Vds

1kV

Package Type

SOT-227

Series

HiperFET

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

390mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.5V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

568W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

267nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

25.42 mm

Height

9.6mm

Length

38.23mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Series


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