N-Channel MOSFET, 36 A, 1000 V, 4-Pin SOT-227 IXYS IXFN36N100

RS Stock No.:: 193-795
Mfr. Part No.:: IXFN36N100
Manufacturer:: IXYS

N-Channel MOSFET, 36 A, 1000 V, 4-Pin SOT-227 IXYS IXFN36N100

This image is representative of the product range

Temporarily out of stock - back order for despatch 01/11/2024, delivery within 4 working days from despatch date

Price Each

MYR390.50

Units	Per Unit
1 - 2	MYR390.50
3 - 4	MYR377.61
5 +	MYR365.16

RS Stock No.:: 193-795
Mfr. Part No.:: IXFN36N100
Manufacturer:: IXYS

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	36 A
Maximum Drain Source Voltage	1000 V
Series	HiperFET
Package Type	SOT-227B
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	240 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	700 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Length	38.23mm
Typical Gate Charge @ Vgs	380 nC @ 10 V
Transistor Material	Si
Width	25.42mm
Height	9.6mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 36 A, 1000 V, 4-Pin SOT-227 IXYS IXFN36N100

N-channel Power MOSFET, IXYS HiperFET™ Series