Infineon HEXFET Type P-Channel MOSFET, 11 A, 55 V Enhancement, 3-Pin TO-252 IRFR9024NTRPBF
- RS Stock No.:
- 827-4088
- Mfr. Part No.:
- IRFR9024NTRPBF
- Manufacturer:
- Infineon
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View bulk pricing optionsSubtotal (1 pack of 20 units)*
MYR50.22
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In Stock
- Plus 860 unit(s) shipping from 07 September 2026
- Plus 9,620 unit(s) shipping from 14 September 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 480 | MYR2.511 | MYR50.22 |
| 500 - 2480 | MYR2.462 | MYR49.24 |
| 2500 + | MYR2.026 | MYR40.52 |
*price indicative
- RS Stock No.:
- 827-4088
- Mfr. Part No.:
- IRFR9024NTRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 175mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Forward Voltage Vf | -1.6V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 38W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 6.22mm | |
| Length | 6.73mm | |
| Height | 2.39mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 175mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Forward Voltage Vf -1.6V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 38W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 6.22mm | ||
Length 6.73mm | ||
Height 2.39mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 11A Maximum Continuous Drain Current, 38W Maximum Power Dissipation - IRFR9024NTRPBF
This P-channel MOSFET, utilising HEXFET technology, delivers efficient performance across a range of electronic applications. Its robust attributes make it a Crucial component for users in automation, electronics, as well as the electrical and mechanical sectors. The product is adept at managing high current loads while ensuring effective control in power circuits.
Features & Benefits
• Maximum continuous drain current of 11A facilitates high-performance applications
• Can withstand drain-source voltage of up to 55V for increased reliability
• Low RDS(on) of 175 mΩ minimises power loss during operation
• Enhancement mode design optimises efficiency for various uses
• DPAK TO-252 surface mount package simplifies PCB integration and assembly
Applications
• Effective energy management in power supply circuits
• Suitable for motor control needing high current
• Utilised in DC-DC converters for improved efficiency
• Ideal for load switching due to Rapid response times
• Employed in industrial automation systems for added reliability
What is the maximum power dissipation of this component?
It has a maximum power dissipation capability of 38W.
How does the product handle gate voltages?
The gate can accommodate voltages ranging from -20 V to +20 V, allowing design flexibility.
What is the thermal performance of the device?
It operates safely at a maximum temperature of 150 °C, ensuring reliability in diverse environments.
Is it easy to mount on a PCB?
Yes, the DPAK TO-252 package enables straightforward surface mounting on printed circuit boards.
How does this MOSFET perform under varying temperatures?
It remains functional within a wide temperature range of -55 °C to +150 °C, catering to diverse application needs.
Related links
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