Infineon HEXFET P-Channel MOSFET, 11 A, 55 V, 3-Pin DPAK IRFR9024NTRPBF

RS Stock No.:: 827-4088
Mfr. Part No.:: IRFR9024NTRPBF
Manufacturer:: Infineon

Infineon HEXFET P-Channel MOSFET, 11 A, 55 V, 3-Pin DPAK IRFR9024NTRPBF

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MYR71.74

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Units	Per Unit	Per Pack**
20 - 480	MYR3.587	MYR71.74
500 - 2480	MYR3.516	MYR70.32
2500 +	MYR2.894	MYR57.88

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RS Stock No.:: 827-4088
Mfr. Part No.:: IRFR9024NTRPBF
Manufacturer:: Infineon

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 11A Maximum Continuous Drain Current, 38W Maximum Power Dissipation - IRFR9024NTRPBF

This P-channel MOSFET, utilising HEXFET technology, delivers efficient performance across a range of electronic applications. Its robust attributes make it a crucial component for users in automation, electronics, as well as the electrical and mechanical sectors. The product is adept at managing high current loads while ensuring effective control in power circuits.

Features & Benefits

• Maximum continuous drain current of 11A facilitates high-performance applications
• Can withstand drain-source voltage of up to 55V for increased reliability
• Low RDS(on) of 175 mΩ minimises power loss during operation
• Enhancement mode design optimises efficiency for various uses
• DPAK TO-252 surface mount package simplifies PCB integration and assembly

Applications

• Effective energy management in power supply circuits
• Suitable for motor control needing high current
• Utilised in DC-DC converters for improved efficiency
• Ideal for load switching due to rapid response times
• Employed in industrial automation systems for added reliability

What is the maximum power dissipation of this component?

It has a maximum power dissipation capability of 38W.

How does the product handle gate voltages?

The gate can accommodate voltages ranging from -20 V to +20 V, allowing design flexibility.

What is the thermal performance of the device?

It operates safely at a maximum temperature of 150 °C, ensuring reliability in diverse environments.

Is it easy to mount on a PCB?

Yes, the DPAK TO-252 package enables straightforward surface mounting on printed circuit boards.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	11 A
Maximum Drain Source Voltage	55 V
Package Type	DPAK (TO-252)
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	175 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	38 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Width	6.22mm
Transistor Material	Si
Number of Elements per Chip	1
Length	6.73mm
Typical Gate Charge @ Vgs	19 nC @ 10 V
Height	2.39mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.6V