P-Channel MOSFET, 9.9 A, 30 V, 8-Pin PowerPAK ChipFET Vishay SI5419DU-T1-GE3

RS Stock No.:: 818-1312
Mfr. Part No.:: SI5419DU-T1-GE3
Manufacturer:: Vishay

P-Channel MOSFET, 9.9 A, 30 V, 8-Pin PowerPAK ChipFET Vishay SI5419DU-T1-GE3

This image is representative of the product range

Price Each (In a Pack of 20)

MYR2.204

240 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per Unit	Per Pack**
20 +	MYR2.204	MYR44.08

**price indicative

RS Stock No.:: 818-1312
Mfr. Part No.:: SI5419DU-T1-GE3
Manufacturer:: Vishay

Si5419DU, P-Channel 30V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	9.9 A
Maximum Drain Source Voltage	30 V
Package Type	PowerPAK ChipFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	33 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	31 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	1.98mm
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	30 nC @ 10 V
Length	3.08mm
Transistor Material	Si
Height	0.85mm
Minimum Operating Temperature	-55 °C

P-Channel MOSFET, 9.9 A, 30 V, 8-Pin PowerPAK ChipFET Vishay SI5419DU-T1-GE3

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

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