Vishay SiSS73DN Type P-Channel MOSFET, 16.2 A, 150 V Enhancement, 8-Pin PowerPAK 1212 SISS73DN-T1-GE3
- RS Stock No.:
- 188-4940
- Distrelec Article No.:
- 304-38-852
- Mfr. Part No.:
- SISS73DN-T1-GE3
- Manufacturer:
- Vishay
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 188-4940
- Distrelec Article No.:
- 304-38-852
- Mfr. Part No.:
- SISS73DN-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 16.2A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | SiSS73DN | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 65.8W | |
| Typical Gate Charge Qg @ Vgs | 14.6nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.78mm | |
| Standards/Approvals | No | |
| Length | 3.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 16.2A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series SiSS73DN | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 65.8W | ||
Typical Gate Charge Qg @ Vgs 14.6nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.78mm | ||
Standards/Approvals No | ||
Length 3.3mm | ||
Automotive Standard No | ||
P-Channel 150 V (D-S) MOSFET.
TrenchFET® with ThunderFET technology
Very low RDS(on) minimizes power loss from conduction
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