P-Channel MOSFET, 9.9 A, 30 V, 8-Pin PowerPAK ChipFET Vishay SI5419DU-T1-GE3
- RS Stock No.:
- 165-6326
- Mfr. Part No.:
- SI5419DU-T1-GE3
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (1 reel of 3000 units)**
MYR3,894.00
Temporarily out of stock - back order for despatch 16/05/2026, delivery within 4 working days from despatch date*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Reel** |
---|---|---|
3000 - 3000 | MYR1.298 | MYR3,894.00 |
6000 - 9000 | MYR1.269 | MYR3,807.00 |
12000 + | MYR1.246 | MYR3,738.00 |
**price indicative
- RS Stock No.:
- 165-6326
- Mfr. Part No.:
- SI5419DU-T1-GE3
- Manufacturer:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | Vishay | |
Channel Type | P | |
Maximum Continuous Drain Current | 9.9 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | PowerPAK ChipFET | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 33 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1.2V | |
Maximum Power Dissipation | 31 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 1.98mm | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Length | 3.08mm | |
Typical Gate Charge @ Vgs | 30 nC @ 10 V | |
Minimum Operating Temperature | -55 °C | |
Height | 0.85mm | |
Select all | ||
---|---|---|
Manufacturer Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 9.9 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type PowerPAK ChipFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 33 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 31 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 1.98mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Length 3.08mm | ||
Typical Gate Charge @ Vgs 30 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 0.85mm | ||
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