P-Channel MOSFET, 8.4 A, 20 V, 3-Pin SOT-223 onsemi NVF6P02T3G
- RS Stock No.:
- 805-1996
- Mfr. Part No.:
- NVF6P02T3G
- Manufacturer:
- onsemi
Subtotal (1 tape of 10 units)**
MYR52.06
3470 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Tape** |
|---|---|---|
| 10 + | MYR5.206 | MYR52.06 |
**price indicative
- RS Stock No.:
- 805-1996
- Mfr. Part No.:
- NVF6P02T3G
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 8.4 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-223 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 70 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 8.3 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Width | 3.7mm | |
| Typical Gate Charge @ Vgs | 15 nC @ 4.5 V | |
| Length | 6.7mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.65mm | |
Select all | ||
|---|---|---|
Manufacturer onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 8.4 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-223 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 70 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 8.3 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Width 3.7mm | ||
Typical Gate Charge @ Vgs 15 nC @ 4.5 V | ||
Length 6.7mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 1.65mm | ||
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