onsemi NTF6P02 Type P-Channel MOSFET, 8.4 A, 20 V Enhancement, 4-Pin SOT-223 NTF6P02T3G
- RS Stock No.:
- 808-4138
- Distrelec Article No.:
- 304-45-677
- Mfr. Part No.:
- NTF6P02T3G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
MYR70.88
FREE delivery for orders over RM 500.00
In Stock
- 60 unit(s) ready to ship from another location
- Plus 5,060 unit(s) shipping from 29 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 980 | MYR3.544 | MYR70.88 |
| 1000 - 1980 | MYR3.492 | MYR69.84 |
| 2000 + | MYR3.415 | MYR68.30 |
*price indicative
- RS Stock No.:
- 808-4138
- Distrelec Article No.:
- 304-45-677
- Mfr. Part No.:
- NTF6P02T3G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.4A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | NTF6P02 | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 8.3W | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.7 mm | |
| Length | 6.7mm | |
| Height | 1.65mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.4A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series NTF6P02 | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 8.3W | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 3.7 mm | ||
Length 6.7mm | ||
Height 1.65mm | ||
Standards/Approvals No | ||
Automotive Standard AEC | ||
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Related links
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