Infineon ISP Type P-Channel MOSFET, -2.8 A, 40 V Enhancement, 3-Pin SOT-223
- RS Stock No.:
- 250-0565
- Mfr. Part No.:
- ISP25DP06LMSATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 250-0565
- Mfr. Part No.:
- ISP25DP06LMSATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -2.8A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOT-223 | |
| Series | ISP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -2.8A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOT-223 | ||
Series ISP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS™ P-channel small signal MOSFETs 60V in SOT-223 package is the new technology targeted for consumer applications. The main advantage of a P-channel small signal device is the reduction of design complexity in medium and low power applications.
Easy interface to MCU
Fast switching
Avalanche ruggedness
Related links
- Infineon ISP Type P-Channel MOSFET 40 V Enhancement, 3-Pin SOT-223 ISP25DP06LMSATMA1
- Infineon ISP Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-223
- Infineon ISP Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-223 ISP12DP06NMXTSA1
- Infineon ISP Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-223
- Infineon ISP Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-223
- Infineon ISP Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-223
- Infineon ISP Type P-Channel MOSFET 100 V Enhancement, 3-Pin SOT-223 ISP16DP10LMXTSA1
- Infineon ISP Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-223 ISP25DP06NMXTSA1
