Infineon ISP Type P-Channel MOSFET, 2.8 A, 60 V Enhancement, 3-Pin SOT-223 ISP12DP06NMXTSA1
- RS Stock No.:
- 243-9271
- Mfr. Part No.:
- ISP12DP06NMXTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
MYR20.68
FREE delivery for orders over RM 500.00
In Stock
- 90 unit(s) ready to ship from another location
- Plus 985 unit(s) shipping from 07 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | MYR4.136 | MYR20.68 |
| 10 - 95 | MYR3.93 | MYR19.65 |
| 100 - 245 | MYR3.73 | MYR18.65 |
| 250 - 495 | MYR3.55 | MYR17.75 |
| 500 + | MYR3.368 | MYR16.84 |
*price indicative
- RS Stock No.:
- 243-9271
- Mfr. Part No.:
- ISP12DP06NMXTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2.8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-223 | |
| Series | ISP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2.8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-223 | ||
Series ISP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon P-Channel small signal transistor have Pb-free lead plating. The drain current and drain-source voltage of MOSFET is -2.8 A and -60V respectively. It has very low resistance value. The operating temperature is ranges from -55 °C to 150 °C.
Surface Mount technology
Logic level availability
Easy interface to Microcontroller Unit (MCU)
Fast switching
avalanche ruggedness
Related links
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