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DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET, 1.8 A, 60 V Enhancement, 8-Pin SOIC ZXMHC6A07N8TC

RS Stock No.:: 751-5348
Mfr. Part No.:: ZXMHC6A07N8TC
Manufacturer:: DiodesZetex

DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET, 1.8 A, 60 V Enhancement, 8-Pin SOIC ZXMHC6A07N8TC

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 5 units)*

MYR28.22

FREE delivery for orders over RM 500.00

In Stock

7,395 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Pack*
5 - 620	MYR5.644	MYR28.22
625 - 1245	MYR5.366	MYR26.83
1250 +	MYR5.098	MYR25.49

*price indicative

RS Stock No.:: 751-5348
Mfr. Part No.:: ZXMHC6A07N8TC
Manufacturer:: DiodesZetex

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	DiodesZetex
	Product Type	Power MOSFET
	Channel Type	Type N, Type P
	Maximum Continuous Drain Current Id	1.8A
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	350mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	3.2nC
	Forward Voltage Vf	0.8V
	Minimum Operating Temperature	150°C
	Maximum Power Dissipation Pd	1.36W
	Maximum Gate Source Voltage Vgs	20 V
	Transistor Configuration	Full Bridge
	Maximum Operating Temperature	-55°C
	Standards/Approvals	UL 94V-0, AEC-Q101, J-STD-020, RoHS, MIL-STD-202
	Length	5mm
	Width	4 mm
	Height	1.5mm
	Number of Elements per Chip	4
	Automotive Standard	No

	Select all
	Brand DiodesZetex
	Product Type Power MOSFET
	Channel Type Type N, Type P
	Maximum Continuous Drain Current Id 1.8A
	Maximum Drain Source Voltage Vds 60V
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 350mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 3.2nC
	Forward Voltage Vf 0.8V
	Minimum Operating Temperature 150°C
	Maximum Power Dissipation Pd 1.36W
	Maximum Gate Source Voltage Vgs 20 V
	Transistor Configuration Full Bridge
	Maximum Operating Temperature -55°C
	Standards/Approvals UL 94V-0, AEC-Q101, J-STD-020, RoHS, MIL-STD-202
	Length 5mm
	Width 4 mm
	Height 1.5mm
	Number of Elements per Chip 4
	Automotive Standard No

COO (Country of Origin):: CN

DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET, 1.8 A, 60 V Enhancement, 8-Pin SOIC ZXMHC6A07N8TC

FREE delivery for orders over RM 500.00

Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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