Quad N/P-Channel-Channel MOSFET, 1.4 A, 1.8 A, 60 V, 8-Pin SOIC Diodes Inc ZXMHC6A07N8TC

RS Stock No.:: 169-0719
Mfr. Part No.:: ZXMHC6A07N8TC
Manufacturer:: DiodesZetex

Quad N/P-Channel-Channel MOSFET, 1.4 A, 1.8 A, 60 V, 8-Pin SOIC Diodes Inc ZXMHC6A07N8TC

This image is representative of the product range

7415 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ

Price Each (On a Reel of 2500)

MYR3.276

Units	Per Unit	Per Reel*
2500 - 2500	MYR3.276	MYR8,190.00
5000 - 7500	MYR3.204	MYR8,010.00
10000 +	MYR3.145	MYR7,862.50

*price indicative

RS Stock No.:: 169-0719
Mfr. Part No.:: ZXMHC6A07N8TC
Manufacturer:: DiodesZetex

60V SO8 Complementary Enhancement Mode MOSFET H-Bridge
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	1.4 A, 1.8 A
Maximum Drain Source Voltage	60 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	350 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3V
Maximum Power Dissipation	1.36 W
Transistor Configuration	Full Bridge
Maximum Gate Source Voltage	-20 V, +20 V
Length	5mm
Width	4mm
Typical Gate Charge @ Vgs	3.2 nC @ 10 V, 5.1 nC @ 10 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	4
Height	1.5mm
Minimum Operating Temperature	-55 °C

Quad N/P-Channel-Channel MOSFET, 1.4 A, 1.8 A, 60 V, 8-Pin SOIC Diodes Inc ZXMHC6A07N8TC

Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.