Quad N/P-Channel-Channel MOSFET, 4.1 A, 4.98 A, 30 V, 8-Pin SOIC Diodes Inc ZXMHC3F381N8TC

RS Stock No.:: 122-1424
Mfr. Part No.:: ZXMHC3F381N8TC
Manufacturer:: DiodesZetex

Quad N/P-Channel-Channel MOSFET, 4.1 A, 4.98 A, 30 V, 8-Pin SOIC Diodes Inc ZXMHC3F381N8TC

This image is representative of the product range

24635 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ

Price Each (On a Reel of 2500)

MYR3.461

Units	Per Unit	Per Reel*
2500 - 2500	MYR3.461	MYR8,652.50
5000 - 7500	MYR3.385	MYR8,462.50
10000 +	MYR3.322	MYR8,305.00

*price indicative

RS Stock No.:: 122-1424
Mfr. Part No.:: ZXMHC3F381N8TC
Manufacturer:: DiodesZetex

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	4.1 A, 4.98 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	60 mΩ, 80 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3V
Maximum Power Dissipation	1.35 W
Transistor Configuration	Full Bridge
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	9 nC @ 10 V
Length	5mm
Number of Elements per Chip	4
Width	4mm
Minimum Operating Temperature	-55 °C
Height	1.5mm

Quad N/P-Channel-Channel MOSFET, 4.1 A, 4.98 A, 30 V, 8-Pin SOIC Diodes Inc ZXMHC3F381N8TC

Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.