Quad N/P-Channel-Channel MOSFET, 2.5 A, 7.8 A, 30 V, 8-Pin SOIC Diodes Inc DMHC3025LSD-13
- RS Stock No.:
- 122-3273
- Mfr. Part No.:
- DMHC3025LSD-13
- Manufacturer:
- DiodesZetex
24070 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Price Each (On a Reel of 2500)
MYR3.787
Units | Per Unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | MYR3.787 | MYR9,467.50 |
| 5000 - 7500 | MYR3.704 | MYR9,260.00 |
| 10000 + | MYR3.636 | MYR9,090.00 |
*price indicative
- RS Stock No.:
- 122-3273
- Mfr. Part No.:
- DMHC3025LSD-13
- Manufacturer:
- DiodesZetex
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Diodes Inc.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 2.5 A, 7.8 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 40 mΩ, 80 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 1.5 W |
| Transistor Configuration | Full Bridge |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 4 |
| Width | 3.95mm |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 11.4 nC @ 10 V, 11.7 nC @ 10 V |
| Length | 4.95mm |
| Height | 1.5mm |
| Minimum Operating Temperature | -55 °C |