Infineon ISZ Type N-Channel OptiMOSTM Power-MOSFET, 40 A, 30 V Enhancement, 8-Pin PG-TSDSON-8FL
- RS Stock No.:
- 273-3044
- Mfr. Part No.:
- ISZ040N03L5ISATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
MYR50.35
FREE delivery for orders over RM 500.00
In Stock
- 5,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | MYR2.014 | MYR50.35 |
| 50 - 475 | MYR1.858 | MYR46.45 |
| 500 - 975 | MYR1.727 | MYR43.18 |
| 1000 - 2475 | MYR1.694 | MYR42.35 |
| 2500 + | MYR1.66 | MYR41.50 |
*price indicative
- RS Stock No.:
- 273-3044
- Mfr. Part No.:
- ISZ040N03L5ISATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | OptiMOSTM Power-MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | ISZ | |
| Package Type | PG-TSDSON-8FL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.7V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Power Dissipation Pd | 37W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, JEDEC, IEC61249‑2‑21 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type OptiMOSTM Power-MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series ISZ | ||
Package Type PG-TSDSON-8FL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.7V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Power Dissipation Pd 37W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, JEDEC, IEC61249‑2‑21 | ||
Automotive Standard No | ||
The Infineon low voltage power MOSFETs offering broad accessibility and competitive price/performance ratio.
Enables cost effective solutions
Fast shipment
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