Infineon ISZ Type N-Channel MOSFET, 72 A, 30 V Enhancement, 8-Pin PG-TSDSON-8 ISZ056N03LF2SATMA1
- RS Stock No.:
- 348-900
- Mfr. Part No.:
- ISZ056N03LF2SATMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 20 units)*
MYR60.28
FREE delivery for orders over RM 500.00
In Stock
- 5,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 180 | MYR3.014 | MYR60.28 |
| 200 - 480 | MYR2.862 | MYR57.24 |
| 500 - 980 | MYR2.652 | MYR53.04 |
| 1000 - 1980 | MYR2.441 | MYR48.82 |
| 2000 + | MYR2.351 | MYR47.02 |
*price indicative
- RS Stock No.:
- 348-900
- Mfr. Part No.:
- ISZ056N03LF2SATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 72A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PG-TSDSON-8 | |
| Series | ISZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 52W | |
| Typical Gate Charge Qg @ Vgs | 7.4nC | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249‑2‑21, JEDEC, RoHS | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 72A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PG-TSDSON-8 | ||
Series ISZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 52W | ||
Typical Gate Charge Qg @ Vgs 7.4nC | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249‑2‑21, JEDEC, RoHS | ||
- COO (Country of Origin):
- CN
The Infineon StrongIRFET 2 power MOSFET 30 V in PQFN 3.3 x 3.3 package. Infineon’s StrongIRFET 2 power MOSFET 30 V technology features a best-in-class RDS(on) of 5.6 mOhm in a PQFN 3.3 x 3.3 package. This product addresses a broad range of applications from low to high switching frequency.
General purpose products
Excellent robustness
Superior price/performance ratio
Broad availability at distributors
Standard packages and pin out
High manufacturing and supply standards
Related links
- Infineon ISZ Type N-Channel MOSFET 100 V Enhancement, 8-Pin PG-TSDSON-8 ISZ113N10NM5LF2ATMA1
- Infineon ISZ Type N-Channel Power Transistor 30 V Enhancement, 8-Pin PG-TSDSON-8 ISZ028N03LF2SATMA1
- Infineon ISZ Type N-Channel Power Transistor 30 V Enhancement, 8-Pin PG-TSDSON-8 ISZ033N03LF2SATMA1
- Infineon ISZ Type N-Channel MOSFET 30 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ019N03L5SATMA1
- Infineon ISZ Type N-Channel OptiMOSTM Power-MOSFET 30 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ040N03L5ISATMA1
- Infineon ISZ Type N-Channel Power Transistor 135 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ143N13NM6ATMA1
- Infineon ISZ Type N-Channel MOSFET 30 V Enhancement, 8-Pin PG-TSDSON-8FL
- Infineon ISZ Type N-Channel OptiMOSTM Power-MOSFET 30 V Enhancement, 8-Pin PG-TSDSON-8FL