Infineon ISZ Type N-Channel Power Transistor, 128 A, 30 V Enhancement, 8-Pin PG-TSDSON-8 ISZ028N03LF2SATMA1

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Subtotal (1 pack of 10 units)*

MYR57.81

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Units
Per Unit
Per Pack*
10 - 90MYR5.781MYR57.81
100 - 240MYR5.49MYR54.90
250 - 490MYR5.089MYR50.89
500 - 990MYR4.682MYR46.82
1000 +MYR4.507MYR45.07

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RS Stock No.:
348-902
Mfr. Part No.:
ISZ028N03LF2SATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

Power Transistor

Maximum Continuous Drain Current Id

128A

Maximum Drain Source Voltage Vds

30V

Series

ISZ

Package Type

PG-TSDSON-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.8mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

83W

Typical Gate Charge Qg @ Vgs

21nC

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

IEC61249‑2‑21, JEDEC, RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Infineon StrongIRFET 2 power MOSFET 30 V in PQFN 3.3 x 3.3 package. Its features a best-in-class RDS(on) of 2.8 mOhm in a PQFN 3.3 x 3.3 package. This product addresses a broad range of applications from low to high switching frequency. Compared to the previous technology, its achieves up to 40% RDS(on) improvement while having up to 60% FOM enhancement and excellent robustness.

General purpose products

Excellent robustness

Superior price/performance ratio

Broad availability at distributors

Standard packages and pin out

High manufacturing and supply standards

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