Toshiba Type N-Channel MOSFET, 300 mA, 60 V, 6-Pin US6

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Subtotal (1 reel of 3000 units)*

MYR702.00

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Per Reel*
3000 +MYR0.234MYR702.00

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RS Stock No.:
236-3581
Mfr. Part No.:
SSM6N7002KFU,LF(T
Manufacturer:
Toshiba
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Brand

Toshiba

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

300mA

Maximum Drain Source Voltage Vds

60V

Package Type

US6

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

1.2mΩ

Forward Voltage Vf

-0.79V

Typical Gate Charge Qg @ Vgs

0.39nC

Maximum Power Dissipation Pd

500mW

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

2.1mm

Height

0.9mm

Standards/Approvals

No

Width

2 mm

Automotive Standard

No

The Toshiba field effect transistor made up of the silicon material and having N channel MOS type. It is mainly used in high speed switching applications.

Storage temperature range −55 to 150 °C

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