Infineon HEXFET Type N-Channel MOSFET, 44 A, 30 V Enhancement, 8-Pin PQFN IRFH8334TRPBF

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Subtotal (1 pack of 50 units)*

MYR97.55

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Units
Per Unit
Per Pack*
50 - 950MYR1.951MYR97.55
1000 - 1950MYR1.837MYR91.85
2000 +MYR1.691MYR84.55

*price indicative

Packaging Options:
RS Stock No.:
217-2615
Mfr. Part No.:
IRFH8334TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

44A

Maximum Drain Source Voltage Vds

30V

Package Type

PQFN

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

13.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

7.1nC

Maximum Power Dissipation Pd

3.2W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

6.02mm

Height

1.17mm

Width

4.98 mm

Automotive Standard

No

The Infineon 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Optimized for 5V gate-drive voltage (called Logic level)

Industry standard surface-mount power package

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