Infineon HEXFET Type N-Channel MOSFET, 44 A, 30 V Enhancement, 8-Pin PQFN

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Subtotal (1 reel of 4000 units)*

MYR5,664.00

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Units
Per Unit
Per Reel*
4000 - 4000MYR1.416MYR5,664.00
8000 - 12000MYR1.384MYR5,536.00
16000 +MYR1.359MYR5,436.00

*price indicative

RS Stock No.:
217-2614
Mfr. Part No.:
IRFH8334TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

44A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

13.5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

7.1nC

Maximum Power Dissipation Pd

3.2W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1.17mm

Length

6.02mm

Standards/Approvals

RoHS

Width

4.98 mm

Automotive Standard

No

The Infineon 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Optimized for 5V gate-drive voltage (called Logic level)

Industry standard surface-mount power package

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