Infineon HEXFET Type N-Channel MOSFET, 82 A, 30 V Enhancement, 8-Pin PQFN

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Subtotal (1 reel of 4000 units)*

MYR4,988.00

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Units
Per Unit
Per Reel*
4000 - 4000MYR1.247MYR4,988.00
8000 - 12000MYR1.22MYR4,880.00
16000 +MYR1.197MYR4,788.00

*price indicative

RS Stock No.:
217-2612
Mfr. Part No.:
IRFH8325TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

82A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7.2mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

3.6W

Typical Gate Charge Qg @ Vgs

32nC

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

4.98 mm

Height

1.17mm

Standards/Approvals

RoHS

Length

6.02mm

Automotive Standard

No

The Infineon 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Logic level : Optimized for 5 V gate drive voltage

Industry standard surface-mount power package

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