Infineon CoolMOS CE Type N-Channel MOSFET, 3.9 A, 800 V P, 3-Pin TO-220 IPA80R1K4CEXKSA2

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Subtotal (1 pack of 15 units)*

MYR59.145

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Units
Per Unit
Per Pack*
15 +MYR3.943MYR59.15

*price indicative

Packaging Options:
RS Stock No.:
214-4355
Mfr. Part No.:
IPA80R1K4CEXKSA2
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3.9A

Maximum Drain Source Voltage Vds

800V

Series

CoolMOS CE

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.4Ω

Channel Mode

P

Maximum Power Dissipation Pd

31W

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

23nC

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Height

4.85mm

Width

16.15 mm

Standards/Approvals

No

Length

10.68mm

Automotive Standard

No

This Infineon CoolMOSE CE MOSFET uses revolutionary technology for high voltage power MOSFETs. The high voltage capability combines safety with performance and ruggedness to allow stable designs at highest efficiency level.

It is RoHS compliant

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