N-Channel MOSFET, 5.7 A, 800 V, 3-Pin DPAK Infineon IPD80R1K0CEATMA1

RS Stock No.:: 165-8015
Mfr. Part No.:: IPD80R1K0CEATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 5.7 A, 800 V, 3-Pin DPAK Infineon IPD80R1K0CEATMA1

This image is representative of the product range

Bulk discount available

Subtotal (1 reel of 2500 units)**

MYR8,360.00

Temporarily out of stock - back order for despatch 19/06/2025, delivery within 4 working days from despatch date*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over MYR700.00

Units	Per Unit	Per Reel**
2500 - 2500	MYR3.344	MYR8,360.00
5000 - 7500	MYR3.27	MYR8,175.00
10000 +	MYR3.21	MYR8,025.00

**price indicative

RS Stock No.:: 165-8015
Mfr. Part No.:: IPD80R1K0CEATMA1
Manufacturer:: Infineon

Infineon CoolMOS™ CE Power MOSFET

Infineon CoolMOS™ CE Series MOSFET, 5.7A Maximum Continuous Drain Current, 83W Maximum Power Dissipation - IPD80R1K0CEATMA1

This MOSFET provides solutions for power management and general electronics, leveraging advanced CoolMOS CE technology with high voltage capabilities up to 800V. It boasts high efficiency and low on-state resistance, optimising design while enhancing reliability.

Features & Benefits

• Increased power density allows for more compact system designs
• Reduced cooling requirements lead to cost savings for systems
• Lower operating temperatures enhance system reliability
• High peak current capability supports rigorous applications
• Reliable dv/dt rating ensures stability under rapid voltage changes
• Complies with RoHS standards for environmentally sound use

Applications

• Used in LED lighting solutions for retrofit installations
• Suitable for QR flyback topology in power supplies
• Effective within automotive power distribution systems
• Ideal for various high-voltage industrial

How does the MOSFET enhance system performance in power management?

It improves power density and reduces thermal requirements, leading to enhanced efficiency and lower energy losses during operation.

What are the benefits of using this device in LED lighting applications?

It delivers dependable performance with less heat generation, contributing to longevity and stability in lighting systems.

Is this compatible with high-frequency applications?

Yes, its low gate charge and high peak current capabilities make it apt for high-frequency operations, ensuring minimal switching losses.

What is the maximum continuous drain current for this device?

The maximum continuous drain current is rated at 5.7A, making it suitable for various power-intensive applications.

What temperature range can it operate within?

It operates effectively between -55°C and +150°C, offering versatility across different environments.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	5.7 A
Maximum Drain Source Voltage	800 V
Series	CoolMOS™ CE
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	950 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.9V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	83 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Typical Gate Charge @ Vgs	31 nC @ 10 V
Maximum Operating Temperature	+150 °C
Length	6.73mm
Number of Elements per Chip	1
Transistor Material	Si
Width	6.22mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V
Height	2.41mm