Infineon CoolMOS CE Type N-Channel MOSFET, 14.1 A, 550 V Enhancement, 3-Pin TO-252 IPD50R380CEAUMA1

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Subtotal (1 pack of 10 units)*

MYR36.58

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Per Pack*
10 - 620MYR3.658MYR36.58
630 - 1240MYR3.582MYR35.82
1250 +MYR3.474MYR34.74

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Packaging Options:
RS Stock No.:
130-0897
Mfr. Part No.:
IPD50R380CEAUMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

14.1A

Maximum Drain Source Voltage Vds

550V

Series

CoolMOS CE

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

380mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

24.8nC

Maximum Power Dissipation Pd

98W

Forward Voltage Vf

0.85V

Maximum Operating Temperature

150°C

Length

6.73mm

Width

6.22 mm

Height

2.41mm

Standards/Approvals

No

Automotive Standard

No

Infineon CoolMOS™ CE Power MOSFET


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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