Vishay SQJ150EP Type N-Channel MOSFET, 66 A, 40 V Enhancement, 4-Pin SO-8 SQJ150EP-T1_GE3
- RS Stock No.:
- 210-5045
- Mfr. Part No.:
- SQJ150EP-T1_GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
MYR31.16
FREE delivery for orders over RM 500.00
Temporarily out of stock
- Shipping from 10 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 740 | MYR3.116 | MYR31.16 |
| 750 - 1490 | MYR2.96 | MYR29.60 |
| 1500 + | MYR2.813 | MYR28.13 |
*price indicative
- RS Stock No.:
- 210-5045
- Mfr. Part No.:
- SQJ150EP-T1_GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 66A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SQJ150EP | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 6.8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 65W | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.25 mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 66A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SQJ150EP | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 6.8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 65W | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Width 6.25 mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay Automotive N-Channel 40 V (D-S) 175 °C MOSFET has PowerPAK SO-8L package type with 66 A drain current.
TrenchFET Gen IV power MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested
Qgd/Qgs ratio < 1 optimizes switching characteristics
Related links
- Vishay SQJ150EP Type N-Channel MOSFET 40 V Enhancement, 4-Pin SO-8
- Vishay SQJ Type N-Channel MOSFET 80 V Enhancement, 4-Pin PowerPAK SO-8L SQJ186ELP-T1_GE3
- IXYS Type N-Channel MOSFET 600 V Enhancement, 4-Pin SOT-227
- IXYS Type N-Channel MOSFET 500 V Enhancement, 4-Pin SOT-227
- IXYS Type N-Channel MOSFET 600 V Enhancement, 4-Pin SOT-227 IXFN80N60P3
- IXYS Type N-Channel MOSFET 500 V Enhancement, 4-Pin SOT-227 IXFN80N50P
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ140E-T1_GE3
- Vishay SQJQ148E Type N-Channel MOSFET 40 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ148E-T1_GE3