Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 850 mA, 20 V Enhancement, 6-Pin SOT-363 SQ1922AEEH-T1_GE3

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Subtotal (1 pack of 25 units)*

MYR40.85

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Units
Per Unit
Per Pack*
25 - 725MYR1.634MYR40.85
750 - 1475MYR1.552MYR38.80
1500 +MYR1.475MYR36.88

*price indicative

Packaging Options:
RS Stock No.:
188-5029
Mfr. Part No.:
SQ1922AEEH-T1_GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

850mA

Maximum Drain Source Voltage Vds

20V

Series

TrenchFET

Package Type

SOT-363

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

530mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.5W

Forward Voltage Vf

0.8V

Typical Gate Charge Qg @ Vgs

0.9nC

Transistor Configuration

Dual

Maximum Operating Temperature

175°C

Height

1mm

Length

2.2mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFET.

TrenchFET® power MOSFET

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