Dual N-Channel MOSFET, 850 mA, 20 V, 6-Pin SOT-363 Vishay SQ1922AEEH-T1_GE3

RS Stock No.:: 188-4911
Mfr. Part No.:: SQ1922AEEH-T1_GE3
Manufacturer:: Vishay

Dual N-Channel MOSFET, 850 mA, 20 V, 6-Pin SOT-363 Vishay SQ1922AEEH-T1_GE3

Price Each (On a Reel of 3000)

MYR0.832

Temporarily out of stock - back order for despatch 18/02/2025, delivery within 4 working days from despatch date*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per Unit	Per Reel**
3000 +	MYR0.832	MYR2,496.00

**price indicative

RS Stock No.:: 188-4911
Mfr. Part No.:: SQ1922AEEH-T1_GE3
Manufacturer:: Vishay

Datasheet SQ1922AEEH-T1_GE3

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	850 mA
Maximum Drain Source Voltage	20 V
Package Type	SOT-363
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	530 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.5V
Minimum Gate Threshold Voltage	1.5V
Maximum Power Dissipation	1.5 W
Maximum Gate Source Voltage	±12 V
Typical Gate Charge @ Vgs	0.9 nC @ 10 V
Width	1.35mm
Number of Elements per Chip	2
Maximum Operating Temperature	+175 °C
Length	2.2mm
Height	1mm
Automotive Standard	AEC-Q101
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V

Dual N-Channel MOSFET, 850 mA, 20 V, 6-Pin SOT-363 Vishay SQ1922AEEH-T1_GE3

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