Vishay SiHU4N80AE N-Channel MOSFET, 4.1 A, 800 V Enhancement, 3-Pin IPAK SIHU4N80AE-GE3

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RS Stock No.:
188-4879
Mfr. Part No.:
SIHU4N80AE-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.1A

Maximum Drain Source Voltage Vds

800V

Package Type

IPAK

Series

SiHU4N80AE

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.44Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

62.5W

Maximum Gate Source Voltage Vgs

30V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

11nC

Maximum Operating Temperature

150°C

Height

6.22mm

Length

6.73mm

Standards/Approvals

No

Width

2.38mm

Automotive Standard

No

E Series Power MOSFET

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Ciss)

Reduced switching and conduction losses

APPLICATIONS

Server and telecom power supplies

Switch mode power supplies (SMPS)

Power factor correction power supplies (PFC)

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