N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB Vishay IRFBE30PBF

RS Stock No.:: 178-0818
Mfr. Part No.:: IRFBE30PBF
Manufacturer:: Vishay

N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB Vishay IRFBE30PBF

This image is representative of the product range

Bulk discount available

Price Each (In a Tube of 50)

MYR8.016

436 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per Unit	Per Tube**
50 - 50	MYR8.016	MYR400.80
100 - 150	MYR7.893	MYR394.65
200 +	MYR7.739	MYR386.95

**price indicative

RS Stock No.:: 178-0818
Mfr. Part No.:: IRFBE30PBF
Manufacturer:: Vishay

Datasheet

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	4.1 A
Maximum Drain Source Voltage	800 V
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	3 Ω
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	125 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	10.41mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	78 nC @ 10 V
Number of Elements per Chip	1
Width	4.7mm
Minimum Operating Temperature	-55 °C
Height	9.01mm

N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB Vishay IRFBE30PBF

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor