N-Channel MOSFET, 4.1 A, 800 V, 3-Pin IPAK Vishay SIHU4N80AE-GE3

RS Stock No.:: 188-4943
Mfr. Part No.:: SIHU4N80AE-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 4.1 A, 800 V, 3-Pin IPAK Vishay SIHU4N80AE-GE3

Bulk discount available

Price Each (In a Pack of 5)

MYR6.938

Temporarily out of stock - back order for despatch 01/02/2025, delivery within 4 working days from despatch date*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per Unit	Per Pack**
5 - 15	MYR6.938	MYR34.69
20 - 35	MYR6.108	MYR30.54
40 +	MYR5.678	MYR28.39

**price indicative

RS Stock No.:: 188-4943
Mfr. Part No.:: SIHU4N80AE-GE3
Manufacturer:: Vishay

Datasheet SIHU4N80AE-GE3

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	4.1 A
Maximum Drain Source Voltage	800 V
Package Type	IPAK (TO-251)
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	1.44 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	62.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±30 V
Length	6.73mm
Typical Gate Charge @ Vgs	11 nC @ 10 V
Number of Elements per Chip	1
Width	2.38mm
Maximum Operating Temperature	+150 °C
Forward Diode Voltage	1.2V
Height	6.22mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 4.1 A, 800 V, 3-Pin IPAK Vishay SIHU4N80AE-GE3

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