P-Channel MOSFET, 3.1 A, 20 V, 3-Pin SOT-23 Vishay SI2301CDS-T1-E3

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source resistance of 112mohm at a gate-source voltage of 4.5V. It has a maximum gate-source voltage of 8V and drain-source voltage of 20V. The MOSFET has a minimum and a maximum driving voltage of 2.5V and 4.5V respectively. It has continuous drain current of 3.1A and maximum power dissipation of 1.6W. MOSFET has application in load switches for portable devices. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.