Vishay N-Channel MOSFET, 600 mA, 30 V, 3-Pin SOT-323 SI1302DL-T1-E3

RS Stock No.:: 169-6089
Mfr. Part No.:: SI1302DL-T1-E3
Manufacturer:: Vishay

Vishay N-Channel MOSFET, 600 mA, 30 V, 3-Pin SOT-323 SI1302DL-T1-E3

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Subtotal (1 reel of 3000 units)**

MYR2,301.00

3000 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over MYR500.00

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Units	Per Unit	Per Reel**
3000 - 3000	MYR0.767	MYR2,301.00
6000 - 9000	MYR0.75	MYR2,250.00
12000 +	MYR0.736	MYR2,208.00

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RS Stock No.:: 169-6089
Mfr. Part No.:: SI1302DL-T1-E3
Manufacturer:: Vishay

Si1302DL N-Channel 30-V (D-S) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	600 mA
Maximum Drain Source Voltage	30 V
Package Type	SOT-323
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	480 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	280 mW
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	2.2mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	0.86 nC @ 10 V
Width	1.35mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	1mm

Vishay N-Channel MOSFET, 600 mA, 30 V, 3-Pin SOT-323 SI1302DL-T1-E3

FREE delivery for orders over MYR500.00

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

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