N-Channel MOSFET, 600 mA, 30 V, 3-Pin SOT-323 Vishay SI1302DL-T1-E3
- RS Stock No.:
- 169-6089
- Mfr. Part No.:
- SI1302DL-T1-E3
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (1 reel of 3000 units)**
MYR2,184.00
3000 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Reel** |
---|---|---|
3000 - 3000 | MYR0.728 | MYR2,184.00 |
6000 - 9000 | MYR0.712 | MYR2,136.00 |
12000 + | MYR0.699 | MYR2,097.00 |
**price indicative
- RS Stock No.:
- 169-6089
- Mfr. Part No.:
- SI1302DL-T1-E3
- Manufacturer:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | Vishay | |
Channel Type | N | |
Maximum Continuous Drain Current | 600 mA | |
Maximum Drain Source Voltage | 30 V | |
Package Type | SOT-323 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 480 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 280 mW | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 1 | |
Length | 2.2mm | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 0.86 nC @ 10 V | |
Width | 1.35mm | |
Minimum Operating Temperature | -55 °C | |
Height | 1mm | |
Select all | ||
---|---|---|
Manufacturer Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 600 mA | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-323 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 480 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 280 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Length 2.2mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 0.86 nC @ 10 V | ||
Width 1.35mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1mm | ||
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