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    N-Channel MOSFET, 600 mA, 30 V, 3-Pin SOT-323 Vishay SI1302DL-T1-E3

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    Bulk discount available

    Subtotal (1 reel of 3000 units)**

    MYR2,184.00

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    3000 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

    * Delivery dates may change based on your chosen quantity and delivery address.

    Units
    Per Unit
    Per Reel**
    3000 - 3000MYR0.728MYR2,184.00
    6000 - 9000MYR0.712MYR2,136.00
    12000 +MYR0.699MYR2,097.00

    **price indicative

    RS Stock No.:
    169-6089
    Mfr. Part No.:
    SI1302DL-T1-E3
    Manufacturer:
    Vishay
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    Manufacturer

    Vishay

    Channel Type

    N

    Maximum Continuous Drain Current

    600 mA

    Maximum Drain Source Voltage

    30 V

    Package Type

    SOT-323

    Mounting Type

    Surface Mount

    Pin Count

    3

    Maximum Drain Source Resistance

    480 mΩ

    Channel Mode

    Enhancement

    Minimum Gate Threshold Voltage

    1V

    Maximum Power Dissipation

    280 mW

    Transistor Configuration

    Single

    Maximum Gate Source Voltage

    -20 V, +20 V

    Maximum Operating Temperature

    +150 °C

    Number of Elements per Chip

    1

    Length

    2.2mm

    Transistor Material

    Si

    Typical Gate Charge @ Vgs

    0.86 nC @ 10 V

    Width

    1.35mm

    Minimum Operating Temperature

    -55 °C

    Height

    1mm

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