N-Channel MOSFET, 11.3 A, 100 V, 6-Pin PowerPAK SC-70 Vishay SIA416DJ-T1-GE3

RS Stock No.:: 165-6297
Mfr. Part No.:: SIA416DJ-T1-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 11.3 A, 100 V, 6-Pin PowerPAK SC-70 Vishay SIA416DJ-T1-GE3

This image is representative of the product range

Bulk discount available

Price Each (On a Reel of 3000)

MYR1.283

Temporarily out of stock - back order for despatch 13/04/2026, delivery within 4 working days from despatch date*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per Unit	Per Reel**
3000 - 3000	MYR1.283	MYR3,849.00
6000 - 9000	MYR1.254	MYR3,762.00
12000 +	MYR1.231	MYR3,693.00

**price indicative

RS Stock No.:: 165-6297
Mfr. Part No.:: SIA416DJ-T1-GE3
Manufacturer:: Vishay

SiA416DJ, N-Channel 100V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	11.3 A
Maximum Drain Source Voltage	100 V
Package Type	PowerPAK SC-70
Series	ThunderFET
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	130 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.6V
Maximum Power Dissipation	19 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Width	2.15mm
Transistor Material	Si
Length	2.15mm
Typical Gate Charge @ Vgs	6.5 nC @ 10 V
Height	0.75mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 11.3 A, 100 V, 6-Pin PowerPAK SC-70 Vishay SIA416DJ-T1-GE3

N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor

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