Vishay SIA Type N-Channel MOSFET, 31 A, 40 V Enhancement, 7-Pin SC-70 SIA4446DJ-T1-GE3
- RS Stock No.:
- 279-9901
- Mfr. Part No.:
- SIA4446DJ-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Subtotal (1 reel of 3000 units)*
MYR3,849.00
FREE delivery for orders over RM 500.00
In Stock
- Plus 3,000 unit(s) shipping from 20 July 2026
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Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 + | MYR1.283 | MYR3,849.00 |
*price indicative
- RS Stock No.:
- 279-9901
- Mfr. Part No.:
- SIA4446DJ-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SC-70 | |
| Series | SIA | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.011Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Maximum Power Dissipation Pd | 19.2W | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.05mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SC-70 | ||
Series SIA | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.011Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Maximum Power Dissipation Pd 19.2W | ||
Maximum Operating Temperature 150°C | ||
Length 2.05mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested