IXYS Polar HiPerFET N-Channel MOSFET, 200 A, 100 V, 4-Pin SOT-227 IXFN200N10P

RS Stock No.:: 168-4576
Mfr. Part No.:: IXFN200N10P
Manufacturer:: IXYS

IXYS Polar HiPerFET N-Channel MOSFET, 200 A, 100 V, 4-Pin SOT-227 IXFN200N10P

This image is representative of the product range

Subtotal (1 tube of 10 units)**

MYR1,159.29

160 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over MYR500.00

Real time qty checker

Units	Per Unit	Per Tube**
10 +	MYR115.929	MYR1,159.29

**price indicative

RS Stock No.:: 168-4576
Mfr. Part No.:: IXFN200N10P
Manufacturer:: IXYS

IXFN 200N10P, Polar HiPerFET Power MOSFET 100V 200A SOT-227B
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	200 A
Maximum Drain Source Voltage	100 V
Package Type	SOT-227
Series	Polar HiPerFET
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	7.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	680 W
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Width	25.07mm
Maximum Operating Temperature	+175 °C
Length	38.23mm
Typical Gate Charge @ Vgs	235 nC @ 10 V
Height	9.6mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.5V

IXYS Polar HiPerFET N-Channel MOSFET, 200 A, 100 V, 4-Pin SOT-227 IXFN200N10P

FREE delivery for orders over MYR500.00

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

Related links