IXYS Polar HiPerFET N-Channel MOSFET, 200 A, 100 V Enhancement, 4-Pin SOT-227

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Subtotal (1 tube of 10 units)*

MYR1,215.34

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  • Plus 140 unit(s) shipping from 07 September 2026
  • Plus 540 unit(s) shipping from 14 September 2026
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Units
Per Unit
Per Tube*
10 +MYR121.534MYR1,215.34

*price indicative

RS Stock No.:
168-4576
Mfr. Part No.:
IXFN200N10P
Manufacturer:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

200A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-227

Series

Polar HiPerFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

7.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

235nC

Maximum Power Dissipation Pd

680W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

175°C

Width

25.07mm

Standards/Approvals

No

Length

38.23mm

Height

9.6mm

Automotive Standard

No

COO (Country of Origin):
PH

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