Vishay SUM65N20-30 Type N-Channel MOSFET, 65 A, 200 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 165-6029
- Mfr. Part No.:
- SUM65N20-30-E3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 800 units)*
MYR11,228.80
FREE delivery for orders over RM 500.00
Temporarily out of stock
- Shipping from 08 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 800 - 800 | MYR14.036 | MYR11,228.80 |
| 1600 - 2400 | MYR13.727 | MYR10,981.60 |
| 3200 + | MYR13.474 | MYR10,779.20 |
*price indicative
- RS Stock No.:
- 165-6029
- Mfr. Part No.:
- SUM65N20-30-E3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 65A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-263 | |
| Series | SUM65N20-30 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 84mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 90nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.41mm | |
| Standards/Approvals | No | |
| Height | 4.826mm | |
| Width | 9.65 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 65A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-263 | ||
Series SUM65N20-30 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 84mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 90nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 10.41mm | ||
Standards/Approvals No | ||
Height 4.826mm | ||
Width 9.65 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay SUM65N20-30 Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263 SUM65N20-30-E3
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 IRFB4227PBF
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247 IRFP4227PBF
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Vishay SUM45N25-58 Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-263
- Vishay Si1302DL Type N-Channel MOSFET 30 V Enhancement, 3-Pin SC-70
- Vishay Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263